Silicon and Silicon/Germanium Epitaxial Wafers
Posted Date:
Apr 30, 2026
May 12, 2026
Awarded Date:
No Awarded Date
| SetAside Type | ||
| Total Small Business Set-Aside (FAR 19.5) | ||
| Solicitation ID | Solicitation Title | Solicitation Office |
| 1333ND26QNB030152 | Silicon and Silicon/Germanium Epitaxial Wafers | |
| Synopsis | ||
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This solicitation is being amended to answer public questions raised and to update a minimum specification. Question 1: For line items 1-7, could you please confirm the substrate diameter? Answer 1: The substrate diameter is 100 mm. Question 2: What is the preferred method of growth (1) CVD (Chemical Vapor Deposition) or (2) MBE (Molecular Beam Epitaxy). Answer 2: (B) The government is not specifying the production method and any production method that yields wafers meeting all specifications including thickness, composition, and coherency would be acceptable. Vendors may elect to use different growth methods for different .... Read More |
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| Office Location | Agency Name | Solicitation Base Posting Type |
| NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | Combined Synopsis/Solicitation | |
| SetAside Type | ||
| Total Small Business Set-Aside (FAR 19.5) | ||
| Solicitation ID | Solicitation Title | Solicitation Office |
| 1333ND26QNB030152 | Silicon and Silicon/Germanium Epitaxial Wafers | |
| Synopsis | ||
|
Please see attached document. .... Read More |
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| Office Location | Agency Name | Solicitation Base Posting Type |
| NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | Combined Synopsis/Solicitation | |
