Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate
Posted Date:
Jul 06, 2026
Jul 10, 2026
Awarded Date:
No Awarded Date
| SetAside Type | ||
| No Set aside used | ||
| Solicitation ID | Solicitation Title | Solicitation Office |
| 80NSSC26936816Q | Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate | |
| Synopsis | ||
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See the attached SOW. All correspondence should reference ID# to ensure visibility. *PLEASE NOTE* THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED / ACCEPTED AT THIS TIME. A price quote alone generally does not provide sufficient information to evaluate a vendor's technical capability. .... Read More |
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| Office Location | Agency Name | Solicitation Base Posting Type |
| NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | Combined Synopsis/Solicitation | |
